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DATA SHEET
MOS INTEGRATED CIRCUIT
PD3734A
2660 PIXELS CCD LINEAR IMAGE SENSOR
The PD3734A is a high sensitivity CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal. The PD3734A has 2660 pixels and an output amplifier which has high gain and wide output range, but low noise. Built-in sample and hold circuit converts and outputs independent signal from CCD register in every pixel to continuous video signal. So it is easy to interface to A/D converter or Bi-level converter.
FEATURES
* Valid photocell * Photocell's pitch * High sensitivity * Resolution * Power supply * Drive clock level * High speed scan * Built-in circuit : 2660 pixels : 11 m : 70 V/lx*s TYP. : 12 dot/mm 300 dpi : +12 V : CMOS output under 5 V operation : 0.54 ms/line (S/H in used) : Sample and hold circuit Reset feed-through level clamp circuit Clamp pulse generation circuit Voltage amplifier * Low noise * Low image lag * Pin assign : A quarter of the PD3734 : 1 % MAX. : Compatible with the PD3734 A4 (210 x 297 mm) size (shorter side)
* Peak response wavelength : 550 nm (green) US letter (8.5" x 11") size (shorter side)
ORDERING INFORMATION
Part Number Package CCD linear image sensor 22-pin plastic DIP (400 mil)
PD3734ACY
The information in this document is subject to change without notice. Document No. S11454EJ1V0DS00 (1st edition) Date Published May 1996 P Printed in Japan
(c)
1996
PD3734A
COMPARISON CHART
Item PIN CONFIGURATION RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS Average dark signal MAX. (mV) Dark signal non-uniformity (mV) MIN. TYP. MAX. TYP. MAX. TYP. MAX. Pin 13 Data rate MAX. (MHz)
PD3734ACY
No connection 5 (S/H in used) 4 (S/H not in used) 3.0
PD3734CY-1
Digital GND 3 (No conditions)
8.0 -8 4 +8 170 220 7 14 Data rate = 3 MHz
4 6 190 250 0.3 1.0 Data rate = 4 MHz
Power consumption (mW) Image lag (%)
Total transfer efficiency (test conditions) Reset feed-through noise (mV) MIN. TYP. MAX.
-900 -200 +500 4.5 0.9 (S/H in used) 0.9 (S/H not in used)
0 1000 1800 16 No definition
Bit noise TYP. (mVp-p) Random noise (mV)
TIMING CHART
t4 MIN. (ns) t5 MIN. (ns) t8 MIN. (ns)
90 70 20 Absolute value Refer to DEFINITIONS OF CHARACTERISTICS ITEMS 11. Random noise
150 150 80 Minus and plus value No definition
DEFINITIONS OF CHARACTERISTICS ITEMS
Dark signal non-uniformity Random noise
2
BLOCK DIAGRAM
VOD 3
AGND 10
14 2
RB 21
VOUT 17
* * *
Voltage Amplifier S/H circuit Reset feed-through level clamp circuit
Optical black (OB) 18 pixels, invalid 2 pixels, valid photocell 2660 pixels, invalid 2 pixels
9
TG
SHB
2 15 1
4 AGND
PD3734A
3
PD3734A
PIN CONFIGURATION (Top View)
CCD linear image sensor 22-pin plastic DIP (400 mil)
No connection
1
NC
NC
22
No connection
Sample and hold clock
2
SHB
VOD
RB
NC
21
Reset gate clock
Output drain voltage
3
20
No connection
Analog GND
4
AGND
NC
19
No connection
No connection
5
NC
NC VOUT
18
No connection
No connection
6
NC
17
Output
No connection
7
NC
NC
16
No connection
No connection
8
NC
1 2
15
Shift register clock 1
Transfer gate clock
9
TG
14
Shift register clock 2
Analog GND
10
AGND
NC
13
No connection
No connection
11
NC
NC
12
No connection
PHOTOCELL STRUCTURE DIAGRAM
9 m
2 m
11 m
Channel stopper
Aluminum electrode
4
PD3734A
ABSOLUTE MAXIMUM RATINGS (TA = +25 C)
Parameter Output drain voltage Shift register clock voltage Reset gate clock voltage Transfer gate clock voltage Sample and hold clock voltage Operating ambient temperature Storage temperature VOD V1, V2 VRB VTG VSHB TA Tstg Symbol Ratings -0.3 to +15 -0.3 to +15 -0.3 to +15 -0.3 to +15 -0.3 to +15 -25 to +60 -40 to +70 Unit V V V V V C C
Caution Exposure to ABSOLUTE MAXIMUM RATING for extended periods may affect device reliability; exceeding the ratings could cause permanent damage. The parameters apply independently.
RECOMMENDED OPERATING CONDITIONS (TA = -25 to +60 C)
Parameter Output drain voltage Shift register clock high level Shift register clock low level Reset gate clock high level Reset gate clock low level Transfer gate clock high level Transfer gate clock low level Sample and hold clock high level Sample and hold clock low level Data rate Symbol VOD V1H, V2H V1L, V2L VRBH VRBL VTGH VTGL VSHBH VSHBL fRB S/H in used S/H not in used Conditions MIN. 11.4 4.5 -0.3 4.5 -0.3 4.5 -0.3 4.5 -0.3 0.2 0.2 TYP. 12.0 5.0 0 5.0 0 5.0 0 5.0 0 1 1 MAX. 12.6 5.5 +0.5 5.5 +0.5 5.5 +0.5 5.5 +0.5 5 4 Unit V V V V V V V V V MHz MHz
5
PD3734A
ELECTRICAL CHARACTERISTICS
TA = +25 C, VOD = 12 V, f1 = 0.5 MHz, data rate = 1 MHz, storage time = 10 ms light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 Vp-p
Parameter Saturation voltage Saturation exposure Photo response non-uniformity Average dark signal Dark signal non-uniformity Power consumption Output impedance Response Response peak wavelength Image lag Offset level Input capacitance of shift register clock pin Input capacitance of reset gate clock pin Input capacitance of sample and hold clock pin Input capacitance of transfer gate clock pin Output fall delay time Register imbalance Total transfer efficiency Dynamic range Reset feed-through noise Sample and hold noise CTG 100 pF IL VOS C1, C2 CRB VOUT = 1 V 3.5 Symbol Vsat SE PRNU ADS DSNU PW ZO RF Daylight color fluorescent lamp 49 Daylight color fluorescent lamp VOUT = 500 mV Light shielding Light shielding Test Conditions MIN. 1.5 TYP. 2.0 0.029 2 1.0 4 190 0.5 70 550 0.3 4.5 400 5 1.0 5.5 8 3.0 6 250 1 91 MAX. Unit V lx*s % mV mV mW k V/Ix*s nm % V pF pF
CSHB
5
pF
td RI TTE DR RFSN SHSN VOUT = 500 mV VOUT = 1 V, data rate = 4 MHz Vsat/DSNU Light shielding Light shielding, SHB series resistor 47 -900 -50 92
80 3
ns % %
500 -200 0 +500 +50
times mV mV
Bit noise Random noise
BN S/H in used S/H not in used
4.5 0.9 0.9 65
mVp-p mV mV %
Resolution
MTF
Modulation transfer function at nyquist frequency
6
PD3734A
TIMING CHART 1
TG
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
1346
1347
1
2
RB
VOUT
SHB
VOUT (S/H)
OB (Optical black) 18 pixels Invalid photocell 2 pixels
Valid photocell 2660 pixels Invalid photocell 2 pixels
Remark VOUT = Output when SHB is not in used (When SHB is not in used, connect SHB pin to GND). VOUT (S/H) = Output when SHB is in used.
2691 2692 2693 2694 2695 2696
1 2 3 4 5 6 7 8 9
10 11 12 13 14 15
16 17 18 19 20 21
22 23 24
25 26 27 28 29 30 31
32 33 34
35 36 37
1348
7
PD3734A
TIMING CHART 2
t1
t2
1 2
t6 t3 t7
90 % 10 % 90 % 10 % t4 t5 td
RB
90 % 10 %
VOUT 10 %
RFSN VOS
SHB
90 % 10 % t9 t8 t10 t11
50 % t12 t13 50 % 50 %
VOUT (S/H)
Signal
Sampling noise
Remark VOUT (S/H) = Output when SHB is in used.
8
PD3734A
TIMING CHART for TG, 1, 2
t14 90 %
TG
t16
t15
10 % t17 90 %
1
t18
2
CROSS POINTS for 1, 2
1
2
2 V or more
2 V or more
Remark Adjust cross point of 1, 2 by 1, 2 pin external input resistors.
Parameter t1 ,t2 t3 t4 t5 t6, t7 t8 t9, t10, t11 t12 t13 t14, t15 t16 t17, t18 0 650 0 MIN. 0 20 90 70 0 20 0 0 5 50 1000 100 (2000) 10 TYP. 50 100 300 300 50 200 50 MAX. (100) Unit ns ns ns ns ns ns ns ns ns ns ns ns
9
PD3734A
DEFINITIONS OF CHARACTERISTIC ITEMS
1. Saturation voltage: Vsat Output signal voltage at which the response linearity is lost. 2. Saturation exposure: SE Product of intensity of illumination (lx) and storage time (s) when saturation of output voltage occurs. 3. Photo response non-uniformity: PRNU The peak/bottom ratio to the average output voltage of all the valid pixels calculated by the following formula. PRNU (%) =
VMAX. or VMIN. - 1 x 100 1n Vj n j=1
n : Number of valid pixels Vj : Output voltage of each pixel
VMIN. Register Dark DC level VMAX.
1n Vj n j=1
4.
Average dark signal: ADS Output average voltage in light shielding.
ADS (mV) = 1n Vj n j=1
n : Number of valid pixels Vj : Output voltage of each pixel
5.
Dark signal non-uniformity: DSNU The difference between peak or bottom output voltage in light shielding and ADS. DSNU (mV): maximum of |Vj - ADS|
j = 1 to n
n : Number of valid pixels Vj : Output voltage of each pixel
ADS Register Dark DC level DSNU
10
PD3734A
6. Output impedance: Zo Output pin impedance viewed from outside. 7. Response: R Output voltage divided by exposure (lx*s). Note that the response varies with a light source. 8. Image Lag: IL The rate between the last output voltage and the next one after read out the data of a line.
TG
Light
ON
OFF
VOUT V1
IL (%) =
V1 x 100 VOUT
VOUT
9.
Register Imbalance: RI The rate of the difference between the average of the output voltage of Odd and Even pixels, against the average output voltage of all the valid pixels.
n
22 (V2 j-1 - V2 j ) n j=1 RI (%) = 1n Vj n j=1 x 100
n : Number of valid pixels Vj : Output voltage of each pixel
10. Bit Noise: BN Output signal distribution of a photocell by scan.
11
PD3734A
11. Random noise: Random noise is defined as the standard deviation of a valid photocell output signal with 100 times (= 100 lines) data sampling at dark (light shielding).
100
(mV) =
i=1
(Vi - V)2 100
, V=
1 100 Vi 100 i=1
Vi: A valid photocell output signal among all of the valid photocells
VOUT
V1 V2
...
line 1 line 2
...
V100
line 100
This is measured by the DC level sampling of only the signal level, not by CDS (Correlated Double Sampling).
12
PD3734A
STANDARD CHARACTERISTIC CURVES (TA = +25 C)
DARK OUTPUT TEMPERATURE CHARACTERISTIC 8 2
STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC
4 1 Relative Output Voltage 2 Relative Output Voltage 0.2 0.1 0 10 20 30 40 50 1 5 Storage Time (ms) 10 SPECTRAL RESPONSE CHARACTERISTIC 100 0 400 600 800 Wavelength (nm) 1000 1200
1
0.5
0.25
0.1 Operating Ambient Temperature TA (C)
80
Response Ratio (%)
60
40
20
13
PD3734A
APPLICATION CIRCUIT EXAMPLE
+5 V 0.1 F 10 F /16 V + 10 F /16 V + 0.1 F +12 V 10
PD74HC04 RB SHB
1 NC
NC 22
1
47
2 SHB 3 VOD 4 AGND
RB 21
NC 20 NC 19 NC 18 VOUT 17 NC 16
47 2 k VOUT 100 100 2 2
PD3734A
5 NC 6 NC 7 NC 8 NC
1 15 2 14
NC 13 NC 12
2
10
9 TG 10 AGND 11 NC
TG
Remark When internal sample and hold circuit of the PD3734A is not necessary, connect pin 2 (SHB) to GND.
14
PD3734A
PACKAGE DIMENSIONS
CCD LINEAR IMAGE SENSOR 22PIN PLASTIC DIP (400 mil)
(Unit : mm) 1bit 0.80.3
37.5 44.00.3
9.250.3
2.0
10.16
(1.99) 4.390.4
2.350.2 1
0~10
0.25 0.05
1.020.15 0.460.1 25.4
Name Plastic cap
(5.42)
Dimensions 42.9 ! 8.35 ! 0.7
2
4.210.5
2.54
Refractive index 1.5
1 The bottom of the package
The surface of the chip
2 The thickness of the cap over the chip
22C-1CCD-PKG4
15
PD3734A
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E). Type of Through-hole Device
PD3734ACY: CCD linear image sensor 22-pin plastic DIP (400 mil)
Process Wave soldering (only to leads) Partial heating method Conditions Solder temperature: 260 C or below, Flow time: 10 seconds or less. Pin temperature: 260 C or below, Heat time: 10 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. During assembly care should be taken to prevent solder or flux from contacting the plastic cap. The optical characteristics could be degraded by such contact.
16
PD3734A
NOTES ON CLEANING THE PLASTIC CAP
1 CLEANING THE PLASTIC CAP
Care should be taken when cleaning the surface to prevent scratches. The optical characteristics of the CCD will be degraded if the cap is scratched during cleaning. We recommend cleaning the cap with a soft cloth moistened with one of the recommended solvents below. Excessive pressure should not be applied to the cap during cleaning. If the cap requires multiple cleanings it is recommended that a clean surface or cloth be used.
2 RECOMMENDED SOLVENTS
The following are the recommended solvents for cleaning the CCD plastic cap. Use of solvents other than these could result in optical or physical degradation in the plastic cap. Please consult your sales office when considering an alternative solvent.
Solvents Ethyl Alcohol Methyl Alcohol Isopropyl Alcohol N-methyl Pyrrolidone
Symbol EtOH MeOH IPA NMP
17
PD3734A
[MEMO]
18
PD3734A
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS device behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
19
PD3734A
The application circuits and their parameters are for references only and are not intended for use in actual designin's.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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